Channeled (along <00▪1>) implantation of 140keV Zn into GaN was performed at room temperature and in a dose range from 1013 to 4 x 1016/cm2, respectively. Channeling Rutherford back-scattering measurements and the high-resolution XTEM investigations show the two damage regimes after implantation: one at the surface and another in the projected range. The damage level was very small at low doses and then gradually rose with increasing dose. The back-scattering yield from the near surface region reached the random level at doses higher than 2 x 1016/cm2 and the broken crystals and the amorphous in nm size were formed in the top thin surface layer after implantation to a dose of 3 x 1016/cm2. In the followed defective crystalline layer, the density of defects decreases with increasing the depth. The thread defects and loops were dominant in the region close to the surface at high dose and the clustered point defects were dominant in the deeper layer.

Zn Channeled Implantation in GaN - Damage Investigated by using High Resolution XTEM and Channeling RBS. F.R.Ding, W.He, A.Vantomme, Q.Zhao, B.Pipeleers, K.Jacobs, I.Moerman: Materials Science and Engineering B, 2003, 98[1], 70-3