In epitaxial wurtzite GaN, structural transformations of inversion domain boundaries on prismatic planes were observed at their junctions with basal stacking faults. The admissible line defects formed at these junctions were constructed and relaxed using a modified Stillinger-Weber potential. Fourteen stable admissible interactions were identified. The calculated energies of the interactions were discussed in relevance to the associated dislocations. High resolution electron microscopy observations were compared with simulated images obtained from the relaxed atomic configurations.

Atomic Structure and Energy of Junctions between Inversion Domain Boundaries and Stacking Faults in Wurtzite GaN. J.Kioseoglou, A.Béré, G.P.Dimitrakopulos, A.Serra, G.Nouet, P.Komninou: Physica Status Solidi C, 2003, 0[7], 2464-9