The mobility of the crystal dislocations and their interaction with certain tilt boundaries was investigated by means of atomic computer simulation. Among the 3 possible stable cores of the 1/3[2¯1▪0] (a-type) edge prism dislocation, namely, C5/7, C4 and C8, it was found that the C4 and C8 cores move under an applied strain whereas the C5/7 core was sessile. The a edge basal, a screw and c dislocations were not mobile under strains up to 5%. The simulation also showed that a C4 or C8 units at the interface of certain tilt boundaries move under an applied strain. In turn, dislocations could either annihilate or incorporate on these boundaries.

On the Atomic Structure of Periodic [0001] Tilt Boundaries in GaN - Dislocation Mobility and Boundary-Dislocation Interaction. A.Béré, A.Serra: Materials Science and Engineering A, 2004, 365[1-2], 241-6