Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy were studied by Raman scattering. Besides Mg local vibrational modes, several local mode peaks associated with H complexes were observed in the region around 2200/cm and peaks assigned to C-H complexes were also detected in the region around 2900/cm. These modes arise from the presence of unintentional C and H impurities in the sample, which was corroborated by secondary ion mass spectroscopy measurements. Raman scattering evidence of local vibrational modes of the C-H complex in GaN was reported. The behavior of the local vibrational modes associated with the H and C impurity complexes with annealing temperature was also reported.

Local Vibrational Modes of H Complexes in Mg-Doped GaN Grown by Molecular Beam Epitaxy. R.Cuscó, L.Artús, D.Pastor, F.B.Naranjo, E.Calleja: Applied Physics Letters, 2004, 84[6], 897-9