A deep level transient spectroscopy study was performed on a GaN n+-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect was revealed within the interfacial region of the junctions by the unusual appearance of a minority peak in the majority carrier deep level transient spectra. The deep level defect appears to be an electron trap at Ec-0.59eV in the p-side region of the junction and had tentatively been attributed to the VN–Mg complex. The high concentration of this electrically active deep level defect in the depletion layer of the Si-implanted GaN n+-p junction diodes suggested the need for further investigations.

Deep Level Defect in Si-Implanted GaN n+-p Junction. X.D.Chen, Y.Huang, S.Fung, C.D.Beling, C.C.Ling, J.K.Sheu, M.L.Lee, G.C.Chi, S.J.Chang: Applied Physics Letters, 2003, 82[21], 3671-3