A systematic nucleation of misfit dislocations at the InGaN/GaN hetero-interface was observed. This occurred when InGaN films were grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations were aligned along <1¯1▪0> directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analyzed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip was necessary for plastic relaxation. The active slip system was identified to be {11▪2}<11▪3>. The possibility of activation of other slip systems was also discussed.

Glide along Non-Basal Slip Planes in InGaN Epilayers. S.Srinivasan, L.Geng, F.A.Ponce, Y.Narukawa, S.Tanaka: Physica Status Solidi C, 2003, 0[7], 2440-3