Data were presented concerning the diffusion-barrier efficiency, of plasma-enhanced chemical vapor deposited SiO2 and SiNx layers, with respect to V. An experimental method was proposed which was generally applicable to the investigation of barrier properties against the diffusion of other transition metals (Fe, Cr). The diffusion coefficients of V in SiO2 and SiNx were calculated at 950 to 1350C. The segregation coefficient of V at the Si/SiO2 interface was calculated at 1150 to 1350C. In the case of the Si/SiNx interface, a lower bound on the segregation coefficient could be defined within the same temperature range.

Diffusion Properties of Ion-Implanted Vanadium in PECVD-SiO2 and PECVD-SiNx. J.Isenberg, S.Reber, W.Warta: Journal of the Electrochemical Society, 2003, 150[7], G365-70