The diffusion of Cu in was measured by means of X-ray diffraction and 4-point probe analyses after annealing Cu/(Ti,Zr)N/Si multi-layer samples at 500 to 900C. It was found that the Cu diffusion had components which arose from both the grain boundaries and the lattice. It was suggested that, for the measurement of Cu diffusion, 4-point probe analysis was more precise and sensitive than was X-ray diffraction analysis. Also, (Ti,Zr)N possessed better Cu diffusion barrier properties than did TaN or TiN.

Diffusion of Copper in Titanium Zirconium Nitride Thin Films. Y.L.Kuo, H.H.Lee, C.Lee, J.C.Lin, S.L.Shue, M.S.Liang, B.J.Daniels: Electrochemical and Solid-State Letters, 2004, 7[3], C35-7