An intermediate structure was observed during the recrystallization process from the amorphous state of Bi4Ti3O12 prepared by rapid quenching. The intermediate structure which appears during the recrystallization process consists of 2 phases; one was pyrochlore Bi2Ti2O7 phase and the other was a stacking-fault-induced structure under the excessive Bi condition. The microstructure of the stacking-fault-induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of Bi2O2, some were inserted between the pseudoperovskite layers of Bi4Ti3O12, and a non-stoichiometric Bi2WO6-like structure was stabilized.

Stacking-Fault Induced Intermediate Structure in Bismuth Titanate. Y.Yoneda, J.Mizuki, R.Katayama, K.Yagi, H.Terauchi, S.Hamazaki, M.Takashige: Applied Physics Letters, 2003, 83[2], 275-7