The growth of epitaxial La2Zr2O7 thin films onto (111) Si was studied. Although the interface structure could be strongly affected by Si oxidation during deposition, epitaxial growth of La2Zr2O7 was obtained. A detailed transmission electron microscopic study revealed 2 types of structure (pyrochlore and fluorite) having the same average chemical composition but exhibiting strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure appeared to prevent excess O diffusion and interfacial SiO2 formation.

Interface Formation and Defect Structures in Epitaxial La2Zr2O7 Thin Films on (111) Si. J.W.Seo, J.Fompeyrine, A.Guiller, G.Norga, C.Marchiori, H.Siegwart, J.P.Locquet: Applied Physics Letters, 2003, 83[25], 5211-3