Undoped and oxidized Li-doped single crystals were implanted with 1017Li+/cm2 at 175keV. The Rutherford back-scattering spectrometry/channeling data obtained after implantation showed that damage was produced throughout the entire range of the implanted ions. Optical absorption measurements indicated that after implantation the most intense band occurred at about 5.0eV, which was associated with anion vacancies. After annealing at 450K, the intensity of the O-vacancy band decreased monotonically with temperature and disappeared completely at 950K. A broad extinction band centered at about 2.14eV associated with Li precipitates emerges gradually and anneals out at 1250K. RBS/channeling showed that recovery of the implantation damage was complete after annealing oxidized samples at 1250K.

Radiation-Damage Recovery in Undoped and Oxidized Li Doped MgO Crystals Implanted with Lithium Ions. E.Alves, R.C.da Silva, J.V.Pinto, T.Monteiro, B.Savoini, D.Cáceres, R.González, Y.Chen: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 148-52