A novel method which was based upon potential-pH response measurements was used to determine proton diffusivities in amorphous tantalum oxide thin films. The technique was based upon a model for diffusion-controlled proton transport in the oxide surface, and measured the potential-pH response by using thermostatic measurements. The proton diffusivity of amorphous tantalum oxide films, as deduced by using this method, was 4 x 10-21cm2/s. This method was relatively simple, and avoided the complications which arose from surface-related effects and/or the presence of H traps in the metal.

The Proton Diffusivity of Amorphous Tantalum Oxide Thin Films. G.T.Yu: Physica Status Solidi B, 2004, 241[1], 108-13