Barrier properties of TiAlxNyOz films between electron-beam evaporated Cu thin films and thermally grown SiO2 substrates were investigated by Rutherford back-scattering spectrometry, X-ray diffractometry, electrical resistivity measurement and adhesion tests. The Cu/TiAlxNyOz/SiO2/Si samples were analyzed prior to and after vacuum anneals up to 800C for 1h. Back-scattering analysis indicated that the TiAlxNyOz thin films were formed by reactive sputtering technique by using the TiAl alloy target, N flow and high substrate temperature (400C). Furthermore, Cu diffusion through TiAlxNyOz films did not occur even at high temperature (800C). X-ray diffractometry and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at 400 to 800C for 1h. In addition, it was revealed by tape test that Cu thin films adhere to TiAlxNyOz films very well. Results show that Cu thin film on TiAlxNyOz could be used in the application of high temperature electronics due to its excellent high temperature properties.

Investigation of Diffusion Barrier Properties of Reactive Sputter-Deposited TiAlxNyOz Thin Films for Cu Metallization. H.C.Kim, T.L.Alford: Thin Solid Films, 2004, 449[1-2], 6-11