The behavior of 170keV In implants (1016/cm2) after annealing was investigated at 750 to 850C. The In depth profiles revealed an anomalous behavior due to the plateau region in profiles. Diffusion coefficients for In were estimated from the plateau region of the profiles, and the results could be described by:

D (cm2/s) = 1.1 x 100 exp[-259(kJ/mol)/RT]

This feature in the In profiles resulted from the complex defects formed by In and radiation damage. Annealing led to an intense emission at about 525nm in the photoluminescence spectrum. This emission was due to defects which were related to the O vacancy.

An Effect of Annealing on In-Implanted ZnO. I.Sakaguchi, D.Park, Y.Takata, S.Hishita, N.Ohashi, H.Haneda, T.Mitsuhashi: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 153-6