Room temperature β-FeSi2 light emitting diodes were fabricated by conventional ULSI processes by using a recently developed dislocation engineering approach. The devices were fabricated by Fe implantation into pre-grown abrupt Si p–n junctions followed by low-energy B implantation to form the dislocation loops. Room temperature emission at ~1.6μm was obtained from most of the dislocation engineered devices, in contrast to standard ion beam synthesized β-FeSi2 diodes, where no electroluminescence was observed.

Dislocation Engineered β-FeSi2 Light Emitting Diodes. M.A.Lourenço, R.M.Gwilliam, G.Shao, K.P.Homewood: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 436-9