Self-diffusion of ion-implanted 30Si in SiO2 formed directly on Si substrates by thermal oxidation was studied as a function of the temperature and SiO2 thickness (200, 300 and 650nm). The diffusion coefficient increases by about an order of magnitude with decreasing SiO2 thickness from 650 to 200nm when silicon–nitride capping layers were placed on top of the SiO2, i.e., the distance between the 30Si diffusers and Si/SiO2 interface had a strong influence. Because the stress on SiO2 by nitride estimated for such a change in diffusivity was unrealistically large, Si species, most likely SiO, generated at the Si/SiO2 interface and diffusing into SiO2 must be affecting the self-diffusion of Si in SiO2.

Effect of the Si/SiO2 Interface on Self-Diffusion of Si in Semiconductor-Grade SiO2. S.Fukatsu, T.Takahashi, K.M.Itoh, M.Uematsu, A.Fujiwara, H.Kageshima, Y.Takahashi, K.Shiraishi, U.Gösele: Applied Physics Letters, 2003, 83[19], 3897-9