A variable-frequency light-pumping effect was presented which describes the energetic induced photon generation mechanism in the stress metal oxide silicon system. It was shown that the variable-frequency light-pumping occurred, when both the tunneling electrons and the induced photons were coherent. Both the tunneling electrons and the induced photons in the metal oxide silicon system from the light pumping could gain the energy required to break the Si–O bonds and to excite interstitial O and to lead then to create the intrinsic point defects in the oxide, and the surface Si, and at the interfaces. Based on the hybrid sixfold ring of the continuous random network model for SiO2, the intrinsic point defect generation under low field and its basic properties were studied.

Low Field Stress Induced Double Donor Defect in Metal Oxide Silicon Structures. M.Xu, C.Tan: Solid State Communications, 2003, 128[6-7], 279-82