The role played by mobile interstitial O atoms (O0) in defect processes in oxides was demonstrated by inter-conversion between the O dangling bond and the peroxy radical in SiO2 glass. Super-stoichiometric O0 was created by F2 laser photolysis of the interstitial O2. Upon annealing at above 300C, the O0 migrated and converted the O dangling bond to a peroxy radical. Exposure to 5.0eV light converted the peroxy radical back into a pair: O dangling bond and O0 (quantum yield of about 0.1). This suggested that various defect processes which typically occurred in SiO2 glass at 300 to 500C were related to the migration of O0; which existed in the glass network in the peroxy linkage form.

Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides - Interconversion between Oxygen-Associated Defects in SiO2 Glass. K.Kajihara, L.Skuja, M.Hirano, H.Hosono: Physical Review Letters 92[1], 015504 (3pp)