Point defects in thin (about 100Å) SiO2 layers thermally grown onto Si were investigated by thermally stimulated luminescence and corona oxide characterization of semiconductor measurements. A comparison was proposed between layers grown by steam and N2 diluted steam processes. The effects of post-growth annealing treatments in N2O, NO and N2 atmospheres and of ion irradiation (As or P) were investigated. A good correlation between the results obtained by the two different techniques was found, suggesting a common structural origin of defects responsible for thermally stimulated luminescence active traps and total oxide charge.

Point Defects in Thermal SiO2 Layers - Thermally Stimulated Luminescence and Corona Oxide Electrical Characterization. A.Vedda, A.Bonelli, M.Martini, E.Rosetta, G.Spinolo, M.E.Vitali, M.Alessandri: Journal of Applied Physics, 2003, 94[9], 5643-7