Positron annihilation spectroscopy was used to study defects in pyrite films, deposited onto glass or Si substrates. The results indicated that the main defects in films sulfurized at 300C were S vacancies. Films with a better crystallization behavior were obtained when sulfurized at 400C; due to a reduction in the number of S vacancies in the films. Increasing the sulfurizing temperature to above 400C caused nanoscale pores to appear in the films.

Positron Annihilation Study of Defects in Pyrite FeS2 Films Prepared by Sulfurizing Thermally Iron Films. D.Wan, B.Wang, C.Zhou, C.Ma, Y.Wang, R.Zhang, L.Wei: Physica B, 2004, 344[1-4], 489-94