It was noted that transient effects upon diffusion and activation during post-implantation annealing were a major obstacle to the further miniaturization of ultra large-scale integrated semiconductor devices. Recent developments in the simulation of such phenomena were reviewed here, with particular emphasis being placed upon models for the kinetics of self-interstitial agglomerates and B-interstitial clusters.

Transient-Diffusion Effects. D.Stiebel, P.Pichler: Applied Physics A, 2003, 76[7], 1041-8