Diffusion data were presented for 18 elements implanted into SiO2 layers that had been thermally grown on Si and annealed at 300 to 1000C (table 1). Most of the species studied, (Be, B, Al, Sc, Ti, V, Zn, Ga, Mo), exhibited negligible diffusion over the temperature range used. In general, it was shown here that the diffusivity of dopants or impurities in SiO2 was significantly smaller than that in Si. However, it was also observed that several elements (Rb, In) had a higher diffusivity in SiO2 than in Si. Because Ga and In were both used as sources for focused ion beam analyses, the lack of Ga diffusion and the movement of In in SiO2 was of interest.

Diffusion of 18 Elements Implanted into Thermally Grown SiO2. H.G.Francois-Saint-Cyr, F.A.Stevie, J.M.McKinley, K.Elshot, L.Chow, K.A.Richardson: Journal of Applied Physics, 2003, 94[12], 7433-9

Table 1

Diffusivities of Various Elements Implanted into SiO2