A detailed study was made of thin-oxide degradation. Starting from the experimental conditions of electrical stress, an electron scattering-based model gave the time-evolution

of the defect density. The calculated defect density was used as the input parameter to models of leakage current and low-frequency capacitance. From the reproduction of experimental data on leakage current and low-frequency capacitance, and the electron scattering length, the defect density in the dielectric could be deduced. The very good agreement between experimental results and the simulation supported the present comprehensive model for oxide degradation.

An Advanced Characterization of Defects in Thin Oxides. D.Caputo, F.Irrera, F.Palma: Materials Science and Engineering B, 2003, 102[1-3], 94-8