The interference between the elastic phonon scattering by bound electrons and donor point defects in semiconductors was studied in 2 cases. Firstly, when the electron and the donor point defect belonged to the same site within the approximation of an isolated impurity. Secondly, when they were at different sites; assuming that the impurity atoms were distributed around the origin with a mean-square radius. In both cases, the contribution of such interference to the relaxation rate became vanishingly small. That is, Matthiessen’s rule was obeyed.

Interference between the Elastic Phonon Scatterings by Bound Electrons and Point Defects. B.K.Singh, V.J.Menon, K.C.Sood: Physica B, 2002, 322[1-2], 140-5