Cluster ion implantation, by using decaborane (B10H14), was proposed as a shallow implantation technique for LSI devices with gate lengths of several tens of nm. Experiments and computer simulations of low-energy B monomer and decaborane cluster implantation were performed. Molecular dynamics simulations of B10 cluster implantation yielded similar implant depths, but differing damage density and damage structures as compared with monomer (B1) ion implantation at the same energy-per-atom. Point defects such as vacancy–interstitial pairs were mainly formed by monomer implantation. On the other hand, B10 generated large numbers of defects within a highly-amorphized region at the impact location. This difference in damage structures produced during implantation was expected to lead to differing annihilation processes.

Defect Characteristics by Boron Cluster Ion Implantation. T.Aoki, J.Matsuo, G.Takaoka, N.Toyoda, I.Yamada: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 855-60