The physics of interstitial H in semiconductors and oxides were described on the basis of a first-principles computational approach. It was noted that, in most semiconductors, H acted as an amphoteric impurity; compensating the prevailing conductivity. However, in ZnO the H acted as a shallow donor. A general model was developed for the behavior of H in semiconductors and oxides, and its predictive power was confirmed in the case of InN and GaAsN alloys.

Hydrogen as a Shallow Center in Semiconductors and Oxides. C.G.Van de Walle: Physica Status Solidi B, 2003, 235[1], 89-95