A mechanism was proposed, for the recombination-stimulated growth of a coupled interstitial–vacancy disk in a semiconductor, which featured the intensive generation and localization of electron–hole pairs. An expression was obtained for the growth rate of the dislocation loop as a function of laser radiation intensity and temperature.

Recombination-Stimulated Growth of a Dislocation Loop under Conditions of Intense Laser-Induced Electron–Hole Pair Production. V.I.Emelyanov, A.V.Rogacheva: Technical Physics Letters, 2002, 28[6], 486-8