The heterogeneous string model for a twist disclination, which was an extended defect of rotational type, was considered. The contributions of twist disclinations to the specific heat and internal friction of disordered semiconductors were calculated within the framework of this model.

The Influence of Twist Disclinations on the Specific Heat and Internal Friction of Disordered Semiconductors. D.V.Churochkin, V.A.Osipov: Journal of Physics - Condensed Matter, 2002, 14[48], 12917-22

[705] Dislocations as Electrically Active Centers in Semiconductors

A review was presented of the interaction of the early semiconductor revolution with the in-depth exploration of dislocations in semiconductor crystals.

Dislocations as Electrically Active Centers in Semiconductors - Half a Century from the Discovery. T.Figielski: Journal of Physics - Condensed Matter, 2002, 14[48], 12665-72