It was recalled than thin diffusion layers (5 to 100nm) in semiconductors could be introduced by electron-beam doping. That is, an evaporated film or impurity layer was irradiated with an electron beam so as to induce super-diffusion into the underlying semiconductor substrate. Here, 2- and 3-layer structures were examined without annealing, and the electron-beam doping of P, B, N and Al into Si, diamond and SiC substrates was investigated.

Electron Beam Doping of Impurity Atoms into Semiconductors by Superdiffusion. T.Wada, H.Fujimoto: Physica Status Solidi C, 2003, 0[2], 788-94