The effect of previous low-dose (103rad) γ-irradiation upon the annealing temperature of radiation-induced defects in ion-implanted MOS samples was studied by using the thermally stimulated current method. Here, 2 groups of samples (without any additional treatment or γ-irradiated after oxidation) were used. Both groups were implanted, through the oxide, with 15keV B ions to a dose of 1.2 x 1012/cm2. The samples were then heat-treated at various temperatures. Full annealing of the radiation defects, introduced by ion implantation of the samples with no additional treatment, was observed after 0.25h annealing at 700C. It was shown that γ-irradiation led to a lowering of the annealing temperature after 0.25h annealing at 500C.

Effect of Low Dose γ-Radiation on the Annealing Temperature of Radiation Defects in Ion Implanted MOS Structures. S.Kaschieva, S.Alexandrova: Materials Science and Engineering B, 2002, 95[3], 295-8