The redistribution of the elements as a result of atomic relocations produced by ions, and the recoils due to ballistic and transport processes, was investigated by using dynamic Monte Carlo methods. Phenomena such as radiation-enhanced diffusion and bombardment-induced segregation, triggered by the ion bombardment, could also contribute to the migration of atoms within the target. In order to include both radiation-enhanced diffusion and bombardment-induced segregation, an approach was suggested which was considered to be an extension of the binary collision approximation. That is, it took place simultaneously with the cascade and acted as a correction to the particle redistribution for low energies. Both radiation-enhanced diffusion and bombardment-induced segregation models were based upon a common approach which treated the transport processes as the result of a random migration of point defects (vacancies and interstitials) according to a probability given by a pre-defined Gaussian. The models were tested and the influence of diffusion and segregation was illustrated in the case of 12keV 121Sb+ implantation to low fluences in SiO2/Si substrates and to the self-sputtering of Ga+ ions during the profiling of SiO2/Si interfaces.

Non-Thermodynamic Approach to Including Bombardment-Induced Post-Cascade Redistribution of Point Defects in Dynamic Monte Carlo Code. V.A.Ignatova, I.R.Chakarov, I.V.Katardjiev: Nuclear Instruments and Methods in Physics Research B, 2003, 202, 24-30