The rate of defect production was found to increase with the free carrier concentration, and the electric field strength in the laser wave. The directed migration of intrinsic and impurity defects under the combined effect of laser radiation and an external electric field was analyzed in terms of a model in which the defects were supposed to arise mainly from the accumulation of inclusions whose sizes were significantly smaller than the laser wavelength in the crystal. It was proposed that the directed migration and other displacements of the induced defects were due to drag on the activated atoms, arising from free charge carriers in the laser field and the external electric field.

Migration of Laser-Induced Point Defects in IV–VI Compounds. S.V.Plyatsko: Semiconductors, 2002, 36[6], 629-35