The influence of O and S on the dislocation patterns of a strained 2ML Cu film on Ru was observed by scanning tunneling microscopy. Both O and S adsorption led to the formation of vacancies that aggregate over existing dislocations in the film, thereby modifying the dislocation structure. With increasing adsorbate coverage the overall dislocation structure and pattern were transformed. The atomic mechanisms and general nature of this transformation could be explained in terms of generic dislocation reactions. This interpretation was also supported by atomistic simulations.

Interplay between Gas Adsorption and Dislocation Structure on a Metal Surface. J.de la Figuera, C.B.Carter, N.C.Bartelt, R.Q.Hwang: Surface Science, 2003, 531[1], 29-38