The diffusion of Sn in the hexagonal close-packed α-phase of 4N-purity and 3N-purity Ti was studied at 873 to 1100K. Rutherford back-scattering spectrometry was used to               obtain
the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows the prediction of the Arrhenius law. No significant difference between both kinds of Ti samples was observed. Normal diffusion parameters, Q and D0, close to the self-diffusion ones were obtained.

Diffusion of Sn in Different Purity α-Ti. R.A.Pérez, F.Dyment, M.Behar: Materials Letters, 2003, 57[18], 2670-4