To investigate the migration behavior of interstitials and vacancies in V alloy V–4Cr–4Ti, high purity V alloys were irradiated with 2MeV electrons using a high-voltage electron microscope and 28MeV electrons using a electron linear accelerator. Interstitial type dislocation loops formed quickly in all cases of high-voltage electron microscope irradiation. The saturation density of the dislocation loops was independent of irradiation temperature and defect production rate at 323 to 448K. However, the logarithm of saturated dislocation loop density was inversely proportional to the irradiation temperature, and dislocation loop density was directly proportional to the square root of the defect production rate above 448K. The dissociation energy of the interstitial-impurity complex in V–4Cr–4Ti alloy was estimated to be 1.1eV from the high-voltage electron microscope experiment. It was found from positron lifetime measurements that the vacancies formed vacancy clusters at 373K.

Point Defect Behavior in Electron Irradiated V–4Cr–4Ti Alloy. Q.Xu, T.Yoshiie, H.Mori: Journal of Nuclear Materials, 2002, 307-311[2], 886-90