Recent experiments on the DX behavior of Si in AlGaN alloys were reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments - as well as from the thermal activation of the generation-recombination noise - a quantitative configuration coordinate diagram was constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centers upon the properties of AlGaN alloys with lower Al concentrations were considered.

DX Behaviour of Si Donors in AlGaN Alloys. M.S.Brandt, R.Zeisel, S.T.B.Gönnenwein, M.W.Bayerl, M.Stutzmann: Physica Status Solidi B, 2003, 235[1], 13-9