The annealing of implantation-induced lattice damage was studied by means of the perturbed angular correlation technique, using 181Hf(181Ta) and 111In(111Cd) probes. Substantial fractions of the probe atoms occupied substitutional undisturbed lattice sites after annealing. A detailed investigation of the changes observed during isochronous annealing indicated differences in the recovery process. After In-implantation, the material already exhibited considerable annealing of lattice damage at temperatures below 600C. After Hf-implantation, the material exhibited a so-called reverse annealing effect.

Defect Recovery in AlN and InN after Heavy Ion Implantation. K.Lorenz, R.Vianden: Physica Status Solidi C, 2003, 0[1], 413-6