The formation and evolution of radiation-defect profiles in crystals exposed to high-power ion pulses were examined. A mathematical model for radiation-defect formation, which allowed for the effects of an inhomogeneous non-stationary temperature field and mechanical quasi-static and dynamic stress fields was presented.

Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses. A.V.Voitsekhovskii, A.P.Kokhanenko, S.A.Shulga: Russian Physics Journal, 2002, 45[6], 629-37