Here, n/p junctions were formed by Ar2+ implantation of HgCdTe (111) grown via the isothermal vapor phase epitaxy method. The structural damage after implantation to various doses (1013, 1014 or 1015/cm2) was evaluated by means of transmission electron microscopy. At high doses, the damage distribution exhibited a double region of defects. These were mainly vacancy dislocation loops and lines in the first region, whereas the second zone contained small dislocation loops. An n-type behavior observed after implantation was attributed to the generation and diffusion of Hg from the damaged region.

Transmission Electron Microscopy of the Induced Damage by Argon Implantation in (111) HgCdTe at Room Temperature. M.H.Aguirre, H.R.Cánepa, N.E.Walsöe de Reca: Journal of Applied Physics, 2002, 92[10], 5745-8