The Hall coefficients of four CdTe:In samples, with [In] = 5 x 1016 to 1019/cm3, and two CdTe:Ga samples, with [Ga] = 4 x 1017 and 1.4 x 1018/cm3, were measured between 700 and 1300K under a controlled Cd vapor pressure. Kröger's quasi-chemical equations were used to evaluate the concentrations of point defects as a function of temperature and dopant activity. The results agreed well with experimental data. A maximum in the temperature dependence of the electron concentration was interpreted in terms of a competition between an increase in the concentration of DCd+, donors as a result of the increase in dopant solubility, and in compensation of the donors by native acceptors (VCd2-) and impurity-containing acceptor complexes (AIn- or AGa-). Modelling results confirmed that the formation of these complexes was due mainly to Coulombic interactions.

Defect Equilibria in In- and Ga-Doped CdTe. P.M.Fochuk, A.A.Korovyanko, I.R.Turkevich, O.E.Panchuk: Inorganic Materials, 2002, 38[4], 350-4