The electrical and photoconductive properties of Bridgman-grown V-Zn co-doped bulk crystals were strongly influenced by a single native intrinsic defect which had previously been attributed to the Te vacancy. In order to identify this defect and control its formation, a correlated electron paramagnetic resonance and modulated photocurrent study was carried out. The results made it possible to attribute this defect to the TeCd

antisite; a double-donor. According to the electron paramagnetic resonance and modulated photocurrent data, its +/2+ level position was Ec-0.20eV. Four other centers of minor concentrations were characterized by using modulated photocurrent measurements of as-grown crystals.

A Combined EPR and Modulated Photocurrent Study of Native Defects in Bridgman-Grown Vanadium-Doped Cadmium Telluride - the Case of the Tellurium Antisite. D.Verstraeten, C.Longeaud, A.Ben Mahmoud, H.J.von Bardeleben, J.C.Launay, O.Viraphong, P.C.Lemaire: Semiconductor Science and Technology, 2003, 18[11], 919-26