A point defect model for CdTe was presented which was based upon various potentially electrically active point defects, including VCd, Cdi, VTe, Tei and TeCd. The reaction energies and entropies of the defects were established. The effect of changing the Fermi energy, via the Cd partial pressure and the temperature, was considered in detail. The defect concentrations were given as functions of the Cd partial pressure and the minimum attainable deviation from stoichiometry was derived. By analyzing the calculations, a detailed scheme for post-growth annealing was deduced.

Point Defects in CdTe. Y.Li, G.Ma, W.Jie: Journal of Crystal Growth, 2003, 256[3-4], 266-75