An investigation was made of the defect structure of high-resistivity Ge-doped CdTe by using optical, photo-electric and electrical methods. It was found that the properties were strongly affected by the presence of centers of strong recombination (S-centers) and photo-sensitivity (R-centers). A model was derived for the energy levels which dominated recombination processes in the material.

Defect Structure of Ge-Doped CdTe. M.Fiederle, V.Babentsov, J.Franc, A.Fauler, K.W.Benz, R.B.James, E.Cross: Journal of Crystal Growth, 2002, 243[1], 77-86