The structural features of undoped ingots, grown in a dynamic gas flow at 620C, were studied by selective etching and X-ray diffractometry. It was found that samples grown at a deposition rate of up to 500µm/h consisted of independently growing rods with both [111]A and [111]B directions. This indicated that the vapor composition in the growth region was almost stoichiometric. Both rod types exhibited transverse striations, due to rotation twins. The twin boundaries in rods with the growth direction, [111]A, were also small-angle boundaries, with an additional misorientation of separate twins of 0.2 to 0.3°.

Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced by Free Growth from a Gasdynamic Vapor Flow. Y.V.Klevkov, V.P.Martovitskii, S.A.Medvedev: Semiconductors, 2003, 37[2], 119-23