The diffusion parameters of diamagnetic muons in CuInSe2, CuInS2, CuInTe2, CuGaTe2 and (Ag0.25Cu0.75)InSe2 were determined by using μSR methods. The variations between various compositions were found to support the anion-antibonding localization model. The application of a 2-state model to zero-field data revealed muon trapping by defects. The dipolar width at the trap, and the number of jumps before trapping, were determined. The Cu vacancy was identified to be the trapping center in CuInSe2, and the energy depth of the trap was determined.

Muon Diffusion and Trapping in Chalcopyrite Semiconductors. R.C.Vilão, J.M.Gil, H.V.Alberto, J.P.Duarte, N.A.de Campos, A.Weidinger, M.V.Yakushev, S.F.J.Cox: Physica B, 2003, 326[1-4], 181-