Ions of S were implanted into semi-insulating GaAs, and a SiO2 film was deposited onto the implanted surface. The samples were then subjected to rapid thermal annealing (halogen lamps) for 10 to 12s at 805C or to conventional thermal annealing (800C, 0.5h). The GaAs components in the film were determined from Rutherford back-scattering spectra. Electron-concentration profiles were plotted by using measurements of the capacitance–voltage characteristics. It was shown that S diffused in 2 directions: towards the surface, and into the GaAs bulk. The former was stimulated by vacancies which formed near to the semiconductor surface during SiO2 deposition. The coefficient of bulk S diffusion, and that for S diffusion towards the surface, were 2 orders of magnitude larger during rapid thermal annealing than during conventional thermal annealing. The degree of S activation was also higher.

Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions. V.M.Ardyshev, M.V.Ardyshev: Semiconductors, 2002, 36[3], 250-3