The diffusion length of Ga on GaAs(001)-(2x4)β2 was investigated by using a new Monte Carlo-based method. This method incorporated the chemical potential of Ga into the vapor phase and Ga migration potential on the reconstructed surface, obtained using ab initio calculations. The adsorption, diffusion and desorption kinetics of adsorbate atoms on the surface could thus be investigated. The results implied that the Ga diffusion length before desorption decreased exponentially with temperature because the Ga surface lifetime decreased exponentially. The Ga diffusion lengths, L, along [1¯10] and [110] on GaAs(001)-(2x4)β2 were estimated to be L[1¯10] ≈ 700nm and L[110] ≈ 200nm, respectively, at an incorporation–desorption transition temperature of about 860K.

Monte Carlo Simulation for Temperature Dependence of Ga Diffusion Length on GaAs(001). Y.Kangawa, T.Ito, A.Taguchi, K.Shiraishi, T.Irisawa, T.Ohachi: Applied Surface Science, 2002, 190[1-4], 517-20