The interaction of As with dislocations was studied. By performing molecular dynamics simulations with a Tersoff-type interaction potential, and simulating a microscopic diffusion–drift–aggregation process based upon the kick-out mechanism, it was found that As clusters were preferentially situated at dislocations for energetic and kinetic reasons. This formation of As clusters explained why the radius of a cylinder with an increased free electron concentration around dislocations in n-type S-doped GaAs extended to about 10µm, as revealed by Raman scattering.

Why are Arsenic Clusters Situated at Dislocations in Gallium Arsenide? H.Lei, H.S.Leipner, N.Engler: Applied Physics Letters, 2003, 82[8], 1218-20