Compressive stress–strain curves for GaAs were simulated by using a proposed model for multi-slip which took account of perfect dislocations of 3 types. The results showed a predominant activation of dislocations by the primary slip system, and that a minor role was played by the secondary system. The yield drop which was observed at higher temperatures was not found here.

Modelling of Plastic Behavior of Compound Semiconductors - from Simple Glide to Multiglide. R.Lohonka, G.Vanderschaeve, J.Kratochvíl: Journal of Physics - Condensed Matter, 2002, 14[48], 12975-9