Semi-insulating (001) GaAs wafers implanted with 70MeV 120Sn ions to doses ranging from 5 x 1012 to 5 x 1014/cm2 were studied. The sample curvature was studied at various doses and compared with the theoretically expected values. Also, a survey of some reported implantations with similar experimental data was carried out for comparison. The bending of the sample, related to defects and linear dislocation density due to implantation, was modeled and compared with the estimates for the same by X-ray diffraction. The samples were annealed using a rapid thermal annealing system and the variation in curvature and dislocation density with annealing temperature was studied.

Sample Curvature and Dislocation Density Studies on Ion-Implanted GaAs by X-ray Diffraction. G.P.Nair, K.S.Chandrasekaran, A.M.Narsale, B.M.Arora, D.Kanjilal: Semiconductor Science and Technology, 2003, 18[6], 404-8